Journal
ADVANCED MATERIALS
Volume 32, Issue 45, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202001893
Keywords
chemical vapor deposition; graphene nanoribbons; on-surface synthesis; ultrahigh vacuum
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Funding
- Max Planck Society
- National Program for Thousand Young Talents of China
- Fundamental Research Funds for the Central Universities [2019QNA4008]
- National Science Foundation of China [51902285]
- EU Project through the FET-Proactive Project MoQuaS [610449]
- EU Project through Graphene Flagship [CNECT-ICT-604391]
- Horizon 2020 research and innovation programme GrapheneCore1 [696656]
- European Research Council (ERC)-Adv.-Grant [267160]
- Office of Naval Research Basic Research Challenge (BRC) Program (molecular synthesis and characterization)
- Projekt DEAL
- European Research Council (ERC) [267160] Funding Source: European Research Council (ERC)
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Graphene nanoribbons (GNRs) are quasi-1D graphene strips, which have attracted attention as a novel class of semiconducting materials for various applications in electronics and optoelectronics. GNRs exhibit unique electronic and optical properties, which sensitively depend on their chemical structures, especially the width and edge configuration. Therefore, precision synthesis of GNRs with chemically defined structures is crucial for their fundamental studies as well as device applications. In contrast to top-down methods, bottom-up chemical synthesis using tailor-made molecular precursors can achieve atomically precise GNRs. Here, the synthesis of GNRs on metal surfaces under ultrahigh vacuum (UHV) and chemical vapor deposition (CVD) conditions is the main focus, and the recent progress in the field is summarized. The UHV method leads to successful unambiguous visualization of atomically precise structures of various GNRs with different edge configurations. The CVD protocol, in contrast, achieves simpler and industry-viable fabrication of GNRs, allowing for the scale up and efficient integration of the as-grown GNRs into devices. The recent updates in device studies are also addressed using GNRs synthesized by both the UHV method and CVD, mainly for transistor applications. Furthermore, views on the next steps and challenges in the field of on-surface synthesized GNRs are provided.
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