Journal
ACS NANO
Volume 14, Issue 9, Pages 11542-11547Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c03978
Keywords
indium-tin oxide; wide bandgap; oxide semiconductor; hafnium zirconium oxide; ferroelectric; ultrathin body
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Funding
- SRC nCORE IMPACT Center
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In this work, we demonstrate high-performance indium-tin-oxide (ITO) transistors with a channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. An on-current of 0.243 A/mm is achieved on submicron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Omega.mm and a low contact resistivity of 1.1 x 10(-7) Omega.cm(2). The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin-film transistors, including large-area wafer-size nanometer thin-film formation, low contact resistance and contact resistivity, an atomic thin channel being immune to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line complementary metal-oxide-semiconductor application.
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