Journal
ACS APPLIED ENERGY MATERIALS
Volume 3, Issue 8, Pages 7885-7895Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.0c01296
Keywords
copper; antimony; chalcogenide; molecular precursor; semiconductor; sulfide
Funding
- Australian Research Council [DE150100427, DE170100164, CE170100026, DE130100635]
- Vice-Chancellor Research Fellowship scheme of RMIT University
- Office of the Chief Executive through the CSIRO Manufacturing Flagship
- Australian Research Council [DE150100427, DE130100635] Funding Source: Australian Research Council
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Herein, we describe a method to deposit thin films of the semiconductor CuSbS2 with micrometer-sized grains under inert atmosphere at mild processing temperatures. This is achieved through the decomposition of Cu and Sb dithiocarbamate precursors. Through careful optimization of the processing conditions, phase-pure p-type CuSbS2 thin films with high photoconductivity have been achieved. Tunability of the Cu/Sb ratios is also demonstrated while maintaining phase purity. Photoelectrochemistry is conducted as a function of both processing temperature and Cu/Sb ratio with 10% copper-deficient films annealed between 350 and 400 degrees C, producing the highest relative photocurrent. To assess the performance of these thin films, planar thin-film solar cells are fabricated. Superstrate solar cells (glass/FTO/CdS/(In2S3)/CuSbS2/SPIRO/Au) with either a CdS n- type window layer or a CdS/In2S3 dual n-type window/buffer layer are investigated. The use of a thin buffer layer further boosts the overall device performance, and a champion power conversion efficiency of 1.72% is demonstrated. To date, this efficiency is among the best reported for CuSbS2 solar cells and the highest for solution-processed devices using a planar thin-film architecture.
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