4.7 Article

Efficient Se-Rich Sb2Se3/CdS Planar Heterojunction Solar Cells by Sequential Processing: Control and Influence of Se Content

Journal

SOLAR RRL
Volume 4, Issue 7, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202000141

Keywords

quasi-1D materials; Sb2Se3; sequential process; thin-film solar cells

Funding

  1. H2020 Programme under the project INFINITE-CELL [H2020-MSCA-RISE-2017-777968]
  2. DURACIS project from the SOLARERANET International program (Spanish MINECO) [PCIN-2017-041]
  3. Spanish Ministry of Science, Innovation and Universities under the WINCOST [ENE2016-80788-C5-1-R]
  4. European Regional Development Funds (ERDF, FEDER Programa Competitivitat de Catalunya 2007-2013)
  5. University of Barcelona [2017 SGR 862]
  6. Government of Spain [RYC-2017-23758]

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Quasi-1D chalcogenides are under the spotlight due to their unique properties for several technological applications including computing, photonic, sensing, and energy conversion. In particular, antimony chalcogenides have recently experienced incredible progresses as emerging photovoltaic materials. Herein, the fabrication by a sequential process of Sb2Se3 solar cells is addressed, and the annealing temperature is found to be the main parameter controlling the composition of the Se-rich absorbers. Building on this, a systematic study of the evolution of the optoelectronic parameters of the solar cells as a function of the Se excess is presented together with a thorough characterization of the devices that sheds light on their main limiting factors. A record power conversion efficiency of 5.7% is achieved, the highest reported value using reactive annealing on a metallic precursor for this material.

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