Journal
SOLAR RRL
Volume 4, Issue 10, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202000270
Keywords
interface engineering; perovskite solar cells; surface doping
Funding
- HKRGC General Research Funds (GRF) [16312216]
- HK Innovation and Technology Fund [GHP/079/17SZ]
- Natural Science Foundation of China [21972006, 21905006, 51961165105, 51773230, 21805010]
- Shenzhen Peacock Plan [KQTD2016053015544057]
- Nanshan Pilot Plan [LHTD20170001]
- HKRGC Areas of Excellence Scheme [AoE/P-02/12]
- Shenzhen & Hong Kong Joint Research Program [SGLH20180622092406130]
- Guangdong Science and Technology Program [2017B030314002]
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As one of the most promising hole-transporting materials for perovskite solar cells (PSC), NiO is widely used in the inverted p-i-n cell structure due to its high stability, decent hole conductivity, and easy processability for hysteresis-free cells. However, the efficiency of NiO-based PSCs is still low, due largely to the poor perovskite/NiO interface. Herein, a sulfur-doping strategy to modify NiO surface via ion exchange reaction by a simple and scalable chemical bath deposition technique is introduced, which greatly improves the photovoltaic (PV) performance of the derived devices. A systematic investigation is shown where sulfur doping leads to favorable interfacial energetics with a reduced V-oc loss. Sulfur doping at the interface also improves the contact between NiO and perovksite and facilitates the formation of high-quality perovskite films. Carrier dynamics studies demonstrate reduced defect states and trap-assisted recombination with sulfur doping, which promote the PV performance of the devices. These merits contribute concurrently to low-loss charge transfer across the perovskite/NiO interface and facilitate charge transport through the perovskite films, leading to a high champion efficiency of 20.43% of the p-i-n structure solar cell devices.
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