4.7 Article

Low-Temperature Crystallization of CsPbIBr2 Perovskite for High Performance Solar Cells

Journal

SOLAR RRL
Volume 4, Issue 10, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202000254

Keywords

charge recombination; crystallization; CsPbIBr2 perovskite solar cells; low temperatures

Funding

  1. Strategic Priority Research Program of Chinese Academy of Sciences [XDA17040506]
  2. National Nature Science Foundation of China [21805274, 61674098, 91733301]
  3. Doctor Startup Foundation of Liaoning Province [20180540099]
  4. Cooperation project of Dalian National Laboratory For Clean Energy of Chinese Academy of Sciences [DNL180311]
  5. National Key Research Program of China [2016YFA0202403]
  6. 111 Project [B1404]
  7. NSFC [51572072, 21402045]
  8. Program of Introducing Talents of Discipline to Universities (111 Project) [D18025]
  9. Wuhan Science and Technology Bureau of Hubei Province [2013010602010209]
  10. Educational Commission of Hubei Province [D20181005]
  11. Department of Science AMP
  12. Technology of Hubei Province of China [2015CFA118, 2014CFB167]
  13. Key Program for Intergovernmental SAMP
  14. T Innovation Cooperation Projects of National Key RAMP
  15. D Program of China [2019YFE0107100]
  16. project of knowledge innovation engineering [Y261261606]

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Inorganic cesium lead halide perovskite solar cells (PSCs) have been widely explored due to their outstanding thermal stability and photovoltaic performance. However, the application and development of CsPbIBr2-based PSCs is still hindered by major challenges such as high fabrication temperature and large voltage loss. To address these difficulties, additive engineering is conducted using n-butylammonium iodide (BAI). It is found that it not only improves the crystallization and morphology of perovskite layers but also substantially decreases the annealing temperature. In addition, the BAI incorporation decreases trap state density and restrains nonradiative recombination. As such, a high power conversion efficiency (PCE) of 10.78% is achieved, 21% higher compared with that of the control sample (8.88%). It should be noted that this is particularly high for the CsPbIBr2 PSCs fabricated at low temperatures (<200 degrees C) that are required for flexible devices based on polymeric substrates.

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