Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO(2)gate dielectric. The electrical properties of ZrO(2)films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO(2)as well as optimization of low-temperature solution process. The applications of ZrO(2)and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.