4.7 Article

Enhanced electrochemical property of SILAR-deposited Mn3O4 thin films decorated on graphene

Journal

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
Volume 9, Issue 4, Pages 9049-9058

Publisher

ELSEVIER
DOI: 10.1016/j.jmrt.2020.06.031

Keywords

Manganese oxide; Thin films; Doping; Band gap; Cyclic voltammograms; Specific capacitance

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Manganese oxide and manganese oxide decorated on graphene thin films were successfully synthesized and decorated on graphene via successive ionic layer adsorption and reaction (SILAR) method. The morphological, elemental, structural, optical and electrochemical properties of the deposited films were respectively studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX, or EDS), X-ray diffractometry (XRD), UV-vis spectrophotometry and a 3-electrode potentiostat. Decorating the manganese oxide film on graphene improved the morphological, structural, optical, and electrochemical features of the deposited films. SEM image revealed irregularly fused capsule-like nanopartides, EDX spectra confirmed the elemental composition of the films while the structure of the film improved from amorphous to crystalline after decorating on graphene. Optical results showed improved the transmittance and optical band gap values of the films upon decoration on the graphene. Electrochemical studies showed good cyclic voltammograms and a recorded maximum specific capacitance value of 194 F g(-1). The films find potential application in electrochemical storage devices and optical devices. (C) 2020 Published by Elsevier B.V.

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