4.7 Article

Surface-enhanced Raman scattering from amorphous nanoflowe-rstructural Nb2O5 fabricated by two-step hydrothermal technology

Journal

MATERIALS & DESIGN
Volume 193, Issue -, Pages -

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2020.108808

Keywords

Semiconductor SERS-active substrate; Novel two-step hydrothermal method; Nanollower-structural Nb2O5; Quasi charge transfer resonance; Synergistic effect

Funding

  1. National Key Research and Development Program [2017YFB0310600]
  2. Shanghai International Science and Technology Cooperation Fund [17520711700, 18520744200]
  3. National Natural Science Foundation of China [51471182]

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Semiconductor surface-enhanced Raman scattering (SERS) substrates are showing increasing potential due to their high chemical stability and selective enhancement to probe molecules. Simultaneously, semiconductors have a greater controllability and more flexible SERS regulation strategy relative to precious metals. The tailored shape design not only can affect the SERS performance of noble metal but also can work on semiconductor SERS-active substrates. Here, for the first time, a special nanoflower structure composed of wrinkled amorphous nanosheets is introduced into the promising semiconductor SERS-active substrate Nb2O5 to improve its SERS performance. The Nb2O5 nanoflower clusters with a mean diameter of 262 nm were prepared by a simple and original two-step hydrothermal method, and exhibited a detection limit of 10(-7) M when detecting crystal violet molecules. Owning to the special nanoflower structure assembled by nanosheets. the substrate possesses a large specific surface area, which is conducive to the adsorption of more probe molecules. In addition, the good SERS performance should also be attributed to the synergistic effect of similar to 10(2) electromagnetic field enhancement of Nb2O5 nanoflower, as well as the strong charge transfer resonance in this substrate-molecule system under the 532 nm incident laser. (C) 2020 The Authors. Published by Elsevier Ltd.

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