4.6 Article

Low-Loss and Broadband Silicon Photonic 3-dB Power Splitter with Enhanced Coupling of Shallow-Etched Rib Waveguides

Journal

APPLIED SCIENCES-BASEL
Volume 10, Issue 13, Pages -

Publisher

MDPI
DOI: 10.3390/app10134507

Keywords

silicon photonics; 3-dB power splitter; low-loss; broadband; shallow-etched rib waveguides

Funding

  1. National Research Foundation of Korea (NRF) - Korean government (MSIT) [2018R1C1B6005302]
  2. Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2009-0082580]
  3. GIST Research Institute (GRI) - GIST
  4. National Research Foundation of Korea [2018R1C1B6005302] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Featured Application Silicon photonics, High-density integrated photonic devices, Photonic switches, 1 x N power splitters. A silicon photonic 3-dB power splitter is one of the essential components to demonstrate large-scale silicon photonic integrated circuits (PICs), and can be utilized to implement modulators, 1 x 2 switches, and 1 x N power splitters for various PIC applications. In this paper, we reported the design and experimental demonstration of low-loss and broadband silicon photonic 3-dB power splitters. The power splitter was realized by adiabatically tapered rib waveguides with 60-nm shallow etches. The shallow-etched rib waveguides offered strong coupling and relaxed critical dimensions (a taper tip width of 200 nm and gap spacing of 300 nm). The fabricated device exhibited an excess loss as low as 0.06 dB at a 1550-nm wavelength and a broad operating wavelength range from 1470 nm to 1570 nm. The relaxed critical dimensions (>= 200 nm) make the power splitter compatible with standard fabrication processes of existing silicon photonics foundries.

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