Journal
APL MATERIALS
Volume 8, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0006101
Keywords
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Funding
- Spanish MICINN under the Maria de Maeztu Units of Excellence Programme [MDM-2016-0618, MAT2015-65159-R, RTI2018-094861-B-100, MAT2017-82071-ERC]
- European Union H2020 under the Marie Curie Actions [794982-2DSTOP, 766025-QuESTech]
- Juan de la Cierva - Formacion program by the Spanish MICINN [FJC2018-038688-I]
- Spanish MICINN [BES-2017-07963]
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The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional (2D) materials. In van der Waals heterostructures, transition metal dichalcogenides (TMDs) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the spin Hall effect (SHE) in graphene proximitized with WSe2 up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the SHE and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of 2D materials to advance toward the implementation of novel spin-based devices and future applications.
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