Journal
APL MATERIALS
Volume 8, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0010083
Keywords
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Funding
- US Army [FA5209-16-P-0104]
- Australian Nanotechnology Network travel grant
- Australian Research Council Center of Excellence for Quantum Computation and Communication Technology [CE170100012]
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Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-based NIR photodetectors based on this property but with low detection efficiencies. Here, we investigate the differences between the optical and photocurrent properties of Au-hyperdoped Si. Although defects introduced during fabrication of these materials may not exhibit significant optical absorption, we show that they can produce a measurable photocurrent under NIR illumination. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials is yet to be achieved and we discuss these opportunities in light of our results. This work thus represents a step forward in demonstrating the viability of using impurity-hyperdoped Si materials for NIR photodetection.
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