Journal
ADVANCED SCIENCE
Volume 7, Issue 19, Pages -Publisher
WILEY
DOI: 10.1002/advs.202001266
Keywords
ferroelectric materials; flexible electronics; nonvolatile memory; quasi-van der Waals heteroepitaxy; thin film transistors
Categories
Funding
- National Key RD Program [2016YFA0200400]
- National Natural Science Foundation [61434001, 61574083, 61874065, 51861145202]
- Beijing Natural Science Foundation [4184091]
- Shenzhen Science and Technology Program [JCYJ20150831192224146]
- State Key Laboratory of Low-Dimensional Quantum Physics [KF201715]
- Foshan-Tsinghua Innovation Special Fund [2018THFS0411, 2018THFS0415]
- Academic Research Fund Tier 1 from Singapore Ministry of Education [RG177/18]
- Singapore National Research Foundation (NRF) under the competitive Research Programs (CRP Grant) [NRF-CRP21-2018-0003]
- Beijing Innovation Center for Future Chip
- Nanyang Technological University
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Ferroelectric memories with ultralow-power-consumption are attracting a great deal of interest with the ever-increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb-containing materials, oxide electrode, and limited thermal stability. Here, high-performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2(HZO) via quasi-van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 mu C cm(-2)without a wake-up effect during cycling, but also remarkably robust mechanical properties, degradation-free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin-film transistors with a low operating voltage of +/- 3 V, high on/off ratio of 6.5 x 10(5), and a small subthreshold slope of about 100 mV dec(-1), which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next-generation of wearable, low-power, and nonvolatile memories with manufacturability and scalability.
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