Related references
Note: Only part of the references are listed.Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy
Sang-Hoon Bae et al.
NATURE NANOTECHNOLOGY (2020)
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
Tongbo Wei et al.
OPTICS LETTERS (2020)
Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
Dongdong Liang et al.
NANO ENERGY (2020)
Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate
Hongliang Chang et al.
APPLIED PHYSICS LETTERS (2019)
GaN/AIGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode
Ida Marie Hoiaas et al.
NANO LETTERS (2019)
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl et al.
NATURE PHOTONICS (2019)
Direct CVD Growth of Graphene on Traditional Glass: Methods and Mechanisms
Zhaolong Chen et al.
ADVANCED MATERIALS (2019)
2D AlN Layers Sandwiched Between Graphene and Si Substrates
Wenliang Wang et al.
ADVANCED MATERIALS (2019)
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao et al.
ADVANCED ELECTRONIC MATERIALS (2018)
AlGaN photonics: recent advances in materials and ultraviolet devices
Dabing Li et al.
ADVANCES IN OPTICS AND PHOTONICS (2018)
Polarity governs atomic interaction through two-dimensional materials
Wei Kong et al.
NATURE MATERIALS (2018)
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Yunjo Kim et al.
NATURE (2017)
Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices
Nicholas R. Glavin et al.
ADVANCED MATERIALS (2017)
Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
Donghyun Lee et al.
APPLIED PHYSICS LETTERS (2017)
Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications
Binh H. Le et al.
ADVANCED MATERIALS (2016)
Two-dimensional gallium nitride realized via graphene encapsulation
Zakaria Y. Al Balushi et al.
NATURE MATERIALS (2016)
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
Lisheng Zhang et al.
SCIENTIFIC REPORTS (2016)
Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure
Shin-ichiro Inoue et al.
APPLIED PHYSICS LETTERS (2015)
Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes
Ah Hyun Park et al.
NANOSCALE (2015)
Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods
Michele Conroy et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
Jeehwan Kim et al.
NATURE COMMUNICATIONS (2014)
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
James R. Grandusky et al.
APPLIED PHYSICS EXPRESS (2013)
282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
Peng Dong et al.
APPLIED PHYSICS LETTERS (2013)
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
Max Shatalov et al.
APPLIED PHYSICS EXPRESS (2012)
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
P. Vennegues et al.
JOURNAL OF APPLIED PHYSICS (2012)
Raman Spectroscopy of Graphene and Bilayer under Biaxial Strain: Bubbles and Balloons
Jakob Zabel et al.
NANO LETTERS (2012)
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi et al.
NATURE (2012)
Optical spectroscopy of graphene: From the far infrared to the ultraviolet
Kin Fai Mak et al.
SOLID STATE COMMUNICATIONS (2012)
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
Kunook Chung et al.
SCIENCE (2010)
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
R. Jain et al.
APPLIED PHYSICS LETTERS (2008)
Ultraviolet light-emitting diodes based on group three nitrides
Asif Khan et al.
NATURE PHOTONICS (2008)
Electronic and magnetic properties of 3d transition-metal atom adsorbed graphene and graphene nanoribbons
H. Sevincli et al.
PHYSICAL REVIEW B (2008)
231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
Hideki Hirayama et al.
APPLIED PHYSICS LETTERS (2007)
Defect and stress characterization of AIN films by Raman spectroscopy
Vanni Lughi et al.
APPLIED PHYSICS LETTERS (2006)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva et al.
PHYSICAL REVIEW B (2001)