Journal
ADVANCED SCIENCE
Volume 7, Issue 15, Pages -Publisher
WILEY
DOI: 10.1002/advs.202001272
Keywords
aluminum nitride; deep ultraviolet light-emitting diodes; graphene; quasi-2D growth
Categories
Funding
- National Key R&D Program of China [2018YFB0406703]
- National Natural Science Foundation of China [61974139, 61527814, 61427901]
- Beijing Natural Science Foundation [4182063]
- Key R&D Program of Guangdong Province [2018B030327001, 2018B010109009]
- 2011 Program Peking-Tsinghua-IOP Collaborative Innovation Center for Quantum Matter
Ask authors/readers for more resources
Efficient and low-cost production of high-quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light-emitting diodes (DUV-LEDs). Here, the quasi-2D growth of high-quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high-performance 272 nm DUV-LED is demonstrated. Guided by first-principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr-driven quasi-2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as-fabricated 272 nm DUV-LED shows a 22% enhancement of output power than that with low-temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV-LEDs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available