Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 9, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202000536
Keywords
ion bombardment; oxygen defects; Schottky barrier; silent synapse activation; trap-assisted tunneling
Funding
- Ministry of Science and Technology of China [2018YFE0118300, 2019YFB2205100]
- NSFC for Excellent Young Scholars [51422201]
- NSFC Program [11974072, 51701037, 51732003, 51872043, 51902048, 61774031, 61574031]
- 111 Project [B13013]
- Ministry Education [6141A02033414]
- China Postdoctoral Science Foundation [2019M661185]
- Fundamental Research Funds for the Central Universities [2412019QD015]
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Emulation of biological synapses by electronic devices will form a foundation for realizing brain-inspired computational systems. In addition to mimicking functional synapses, it is also important to demonstrate activation functionality of silent synapses in memristors, to emulate the evolutionary processes of human brain development. Here, a silent synapse without synaptic plasticity is achieved in a single-crystalline TiO(2)nanowire-based memristor. Importantly, the short-term plasticity transforms to long-term plasticity in plasma (O-2, Ar, and Ar-H-2) treated devices, representing activation of a silent synapse to a functional synapse. The memristive mechanism is attributed to the accumulation and diffusion of oxygen vacancies at the Pt/TiO(2)interface, which adjusts the Schottky barrier and conductance. The use of various plasma treatments also enables synaptic function modulation by changing the density of oxygen vacancies. The results provide a feasible method for activating silent synapses and modulating synaptic learning functions in a memristor-based artificial synapse.
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