Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 8, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202000296
Keywords
current-driven magnetization switching; in-memory computing; lateral spin-orbit torque (LSOT); spin-orbit logic; stateful logic
Funding
- National Key R&D Program of China [2017YFB0405700]
- National Natural Science Foundation of China [61774144]
- Chinese Academy of Sciences [QYZDY-SSW-JSC020, XDB44000000, XDB28000000]
- Beijing Natural Science Foundation Key Program [Z190007]
- K. C. Wong Education Foundation
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Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional complementary metal-oxide-semiconductors technology, it is important to develop complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed; however, plainer and more feasible approaches are still strongly desired. Here it is shown that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, Boolean logic gates of AND, OR, NAND, and NOR as well as a spin-orbit half adder containing an exclusive-OR gate are obtained. Moreover, various initialization-free programmable stateful logic operations, including material implication gate, are also demonstrated by regarding the magnetization state as a logic input. The complementary LSOT building blocks provide a potentially applicable way toward future efficient spin logics and in-memory computing architectures.
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