Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 7, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202000061
Keywords
2D ferroelectrics; 2D FETs; alpha-In2Se3
Funding
- National Key Research and Development Program of China [2017YFA0205004, 2018YFA0306600, 2017YFA0204904]
- National Natural Science Foundation of China [11674295, 11674299, 11374273, 11634011, 51732010]
- Fundamental Research Funds for the Central Universities [WK2340000082, WK2030020032, WK2060190084]
- Anhui Initiative in Quantum Information Technologies [AHY170000]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- China Government Youth 1000-Plan Talent Program
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Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous, and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, a new approach is reported to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In(2)Se(3)and MoS2, an in-plane voltage gated coplanar field-effect transistor with distinguished and retentive on/off ratio is validated. The results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating 2D ferroelectric into novel nanoelectronic devices with broad applications.
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