Narrow-Linewidth Tin-Vacancy Centers in a Diamond Waveguide

Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV-) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-line-width emission and long spin coherence times. SnV- centers need to be incorporated in optical waveguides for efficient on chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV- centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV- centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV- centers (as narrow as 36 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV--mediated centers under resonant excitation. Our results are an important step toward SnV--based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.