4.8 Article

Maximize CdTe solar cell performance through copper activation engineering

Journal

NANO ENERGY
Volume 73, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2020.104835

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Funding

  1. Air Force Research Laboratory, Space Vehicles Directorate [FA9453-18-2-0037]
  2. National Science Foundation [1665028, 1711534]
  3. Directorate For Engineering
  4. Div Of Electrical, Commun & Cyber Sys [1665028] Funding Source: National Science Foundation
  5. Div Of Electrical, Commun & Cyber Sys
  6. Directorate For Engineering [1711534] Funding Source: National Science Foundation

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The incorporation of copper (Cu) is one of the critical processes for fabricating high-efficiency CdTe thin-film solar cells. However, due to its high mobility in CdTe, the distribution and concentration of Cu must be carefully engineered to reduce the compensative donor-like interstitial defects in CdTe bulk and the recombination centers at the buffer layer/CdTe interface to maximize device performances. Here, a cuprous chloride (CuCl) solution treatment and a rapid thermal annealing (RTA) process are used to control the concentration and distribution of Cu in CdTe absorbers, enabling a champion CdTe thin-film solar cell with a power conversion efficiency of 17.5% without selenium incorporation. The results demonstrate that the use of a CuCl solution can substantially reduce the amount of Cu needed in CdTe and the RTA process is a viable approach to engineer the Cu distribution in CdTe solar cells.

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