Related references
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Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium
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Native Oxidation Growth on Ge(111) and (100) Surfaces
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Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation
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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties
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Ge-interface engineering with ozone oxidation for low interface-state density
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Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
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