4.6 Article

Surface emitting 1.5 μm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

Journal

OPTICAL MATERIALS EXPRESS
Volume 10, Issue 7, Pages 1714-1723

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OME.395249

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Funding

  1. VINNOVA [2014-01876]
  2. Vetenskapsradet
  3. Science Foundation Ireland [12/RC/2276]

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We demonstrate a surface emitting 1.5 mu m multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 mu m and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 mu m MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 mu m surface emitting laser structures on silicon with further optimization. (c) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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