Journal
MATERIALS
Volume 13, Issue 13, Pages -Publisher
MDPI
DOI: 10.3390/ma13132968
Keywords
atomic layer deposition; ferroelectric film; Hf-0; 5Zr(0); 5O(2); low thermal budget process; TiN electrode
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Funding
- National Research Foundation of Korea (NRF) - Korean government (MSIT) [NRF-2019R1F1A1059972]
- 2019 Research Grant from Kangwon National University
- Brain Pool Program through NRF by the Ministry of Science and ICT in Korea [2019H1D3A2A01101691]
- NRF grant [NRF-2019M3F3A1A02071969, NRF-2019M3F3A1A02071966]
- MOTIE (Ministry of Trade, Industry, and Energy) in Korea under the Fostering Global Talents for Innovative Growth Program [P0008750]
- Ministry of Health & Welfare (MOHW), Republic of Korea [P0008750] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2019H1D3A2A01101691] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2(HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal budget process. Based on experiment demonstrations over the past 10 years, it is well known that HZO films show excellent ferroelectricity when sandwiched between TiN top and bottom electrodes. This work reports a comprehensive study on the effect of TiN top and bottom electrodes on the ferroelectric properties of HZO thin films (10 nm). Investigations showed that during HZO crystallization, the TiN bottom electrode promoted ferroelectric phase formation (by oxygen scavenging) and the TiN top electrode inhibited non-ferroelectric phase formation (by stress-induced crystallization). In addition, it was confirmed that the TiN top and bottom electrodes acted as a barrier layer to hydrogen diffusion into the HZO thin film during annealing in a hydrogen-containing atmosphere. These features make the TiN electrodes a useful strategy for improving and preserving the ferroelectric properties of HZO thin films for next-generation memory applications.
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