Journal
ADVANCED ENERGY MATERIALS
Volume 10, Issue 38, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202001958
Keywords
carrier dynamics; density functional theory calculations; full defects passivation; perovskite solar cells
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Funding
- Singapore Ministry of Education [MOE2016-T2-1-049, R284-000-157-112]
- Boya postdoctoral fellowship of Peking University
- International Postdoctoral Exchange Fellowship Program (Talent-Introduction Program)
- National Key Research and Development Program of China [2017YFA0206600]
- National Natural Science Foundation of China [51773045, 21772030, 51922032, 21961160720]
- National University of Singapore (NUS)
- National Research Foundation Singapore (NRF)
- Singapore Economic Development Board (EDB)
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The lattice defects in the bulk and on the surface of the halide perovskite layer serve as trap sites and recombination centers to annihilate photogenerated carriers, determining the performance and stability of perovskite optoelectronic devices. Herein, the previously reported surface defects passivation engineering is extended to a full defects passivation strategy through stereoscopically introducing the cysteamine hydrochloride (CSA-Cl) in the bulk and on the surface of perovskites. First-principle density functional theory (DFT) calculations are employed to theoretically verify the multiple defects passivation effect of the CAS-Cl on the perovskite. The perovskite layer with full defects passivation exhibits superior carrier dynamics as revealed by femtosecond transient absorption due to the reduced defect density determined by a highly sensitive photothermal deflection spectroscopy technique. Consequently, a high efficiency approaching 21% is achieved for the inverted planar perovskite solar cells (PVSCs). More importantly, the CAS-Cl passivated PVSCs exhibit operation in air, which will be beneficial for the in situ device test for understanding the photophysics involved. This work provides a promising strategy to reduce the defects in both the perovskite bulk and surface for superior optoelectronic properties, facilitating the development of highly efficient and stable PVSCs and other optoelectronic devices.
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