Fabrication and characterization of Mg-doped ε-Ga2O3 solar-blind photodetector

In this work, Mg-doped epsilon-Ga2O3 (3.38 cation % of Mg) solar-blind photodetector is fabricated by using radio-frequency magnetron sputtering and metal-organic chemical vapor deposition methods on sapphire substrate. The results show that the Mg-doped epsilon-Ga2O3 thin film solar-blind photodetector exhibit a photo-to-dark current ratio of 1.68 x 10(2), responsivity of 77.2 mA/W, specific detectivity of 2.85 x 10(12) Jones, and external quantum efficiency of 37.8% at 5 V under 40 mu W/cm(2) 254 nm ultraviolet light illumination, as well as the stable light switching property driven by different applied voltages and light intensities. The achieved Mg-doped epsilon-Ga2O3 solar-blind photodetector is promised to advance relevant developments of the metastable Ga2O3 optoelectronic devices.