Journal
SOLID-STATE ELECTRONICS
Volume 173, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2020.107876
Keywords
AlGaN/GaN heterostructure; Ultra-thin AlGaN barrier; Plasma-enhanced chemical vapor deposition; Silicon nitride; Passivation; Flat-band voltage
Funding
- Basic Science Research Programs [2015R1A6A1A03031833, 2019R1A2C1008894]
- Global Ph.D. Fellowship Program through NRF - Korea Government [NRF-2018H1A2A1060832]
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We have investigated the effects of a silicon nitride (SiNx) passivation process using plasma-enhanced chemical vapor deposition (PECVD) on a ultra-thin-barrier AlGaN/GaN heterostructure field-effect transistors (HFETs). The bulk charge characteristics of the PECVD SiNx films were dependent on the film deposition conditions, which strongly influenced the sheet resistance (R-sh) and flat-band voltage characteristics of AlGaN/GaN HFETs. The reduction in R-sh is a strong function of the amount of positive bulk charges in the SiNx passivation film. An optimized PECVD SiNx process was used to drastically decrease the R-sh from 45,450 Omega/sq to 732 Omega/sq. A Mo/Au Schottky-gate device fabricated with PECVD SiNx passivation exhibited a maximum drain current density of 172 mA/mm, quasi-normally-off operation, and breakdown voltage of > 1100 V
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