Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 209, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2020.110439
Keywords
Microcrystalline silicon oxide; Phosphorus treatment; Crystalline volume fraction; SHJ solar cells
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The current loss is mainly due to the reflection and the parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) in the front side of silicon heterojunction (SHJ) solar cells. In this paper, we implemented n-type hydrogenated microcrystalline silicon oxide (n-mu c-SiOx:H) as the front surface field (FSF) to improve the short-circuit current density (J(SC)) of SHJ solar cells. The advantage of employing n-mu c-SiOx:H layer is due to its low optical absorption coefficient and tunable refractive index. However, the introduction of carbon dioxide increases light transmission but reduces the crystallinity of n-mu c-SiOx:H layer. Meanwhile, inhibiting the incubation layer and increasing microcrystalline/amorphous mixture phase during the growth are critical to the solar cell performance. Therefore, we implemented a high phosphorus-doping seed layer to form a nucleation layer to improve the crystallinity of n-mu c-SiOx:H layer. In addition, the plasma enhanced chemical vapor deposition (PECVD) process parameters of each layer were optimized to obtain good optical and electrical properties of n-mu c-SiOx:H layer. Finally, a 242.5 cm(2) solar cell had been fabricated with conversion efficiency of 23.87%, open-circuit voltage (V-OC) of 739.8 mV, fill factor (FF) of 82.33% and J(SC) of 39.19 mA/cm(2), which was 0.31 mA/cm(2) higher than that of the conventional n type a-Si:H SHJ solar cells.
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