Journal
SENSORS
Volume 20, Issue 14, Pages -Publisher
MDPI
DOI: 10.3390/s20143861
Keywords
zinc oxide; ultraviolet; nanorods; Fe; photodetectors
Funding
- Ministry of Science and Technology of Taiwan [MOST 107-2221-E-150-032, MOST 108-2221-E-024-006, MOST 108-2221-E-150-013-MY2, MOST 108-2622-E-150-010-CC3, MOST 106-2221-E-150-041-MY3]
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In this paper, 100 nm-thick zinc oxide (ZnO) films were deposited as a seed layer on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique, and vertical well-aligned Fe-doped ZnO (FZO) nanorod (NR) arrays were then grown on the seed layer-coated substrates via a low-temperature solution method. FZO NR arrays were annealed at 600 degrees C and characterized by using field emission scanning microscopy (FE-SEM) and X-ray diffraction spectrum (XRD) analysis. FZO NRs grew along the preferred (002) orientation with good crystal quality and hexagonal wurtzite structure. The main ultraviolet (UV) peak of 378 nm exhibited a red-shifted phenomenon with Fe-doping by photoluminescence (PL) emission. Furthermore, FZO photodetectors (PDs) based on metal-semiconductor-metal (MSM) structure were successfully manufactured through a photolithography procedure for UV detection. Results revealed that compared with pure ZnO NRs, FZO NRs exhibited a remarkable photosensitivity for UV PD applications and a fast rise/decay time. The sensitivities of prepared pure ZnO and FZO PDs were 43.1, and 471.1 for a 3 V applied bias and 380 nm UV illumination, respectively.
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