Journal
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
Volume 63, Issue 8, Pages 1531-1537Publisher
SCIENCE PRESS
DOI: 10.1007/s11431-020-1627-0
Keywords
laser manufacture; lateral heterostructure; optoelectronic performance; WSe2
Funding
- MOE under Academic Research Funding (AcRF) Tier 2 [MOE2016-T2-2-103, MOE2017-T2-1-162]
- MOE under Academic Research Funding (AcRF) Tier 1 [2017-T1-001-150, 2017-T1-002-119]
- NTU under Start-Up Grant [M4081296.070.500000]
- Agency for Science, Technology and Research (A*STAR) under its AME IRG in Singapore [A1783c0009]
- Joint Research Fund for Overseas Chinese, Hong Kong and Macao Scholars [51528201]
- National Natural Science Foundation of China [51572057, 51902069, GZ213054, 21571101]
- Natural Science Foundation of Jiangsu Province [BK20161543]
- ITC via Hong Kong Branch of National Precious Metals Material Engineering Research Center
- Start-Up Grant in City University of Hong Kong
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Lateral hetero-junctions are considered as potential candidate for building blocks in modern electronics and optoelectronics, however, the construction of which remains a challenge. In this work, by using a laser-assisted manufacture technique, WSe2/WO(3-x)hetero-junction and monolayer/trilayer WSe(2)homo-junction with Schottky diode like behavior are fabricated, both of which present competitive performance for photodetection and power generation in a wide range of wavelengths from ultraviolet to infrared, with maximum photoresponsivity of 10 A/W, external quantum efficiency of 14%, and power conversion efficiency of 1.3%. Combined with Kelvin probe microscopy and electrical transport measurements, it is demonstrated that the barrier-induced built-in electric field at WSe2/WO(3-x)interface, and the energy band discontinuities at the monolayer/trilayer WSe(2)interface facilitate the separation of photo-generated electron-hole pairs. Our work provides a solid step towards the controllable construction of lateral junctions by laser-assisted manufacture for exploiting van der Waals materials-based novel electronic and optoelectronic applications.
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