Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe2

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe2 intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V-w dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V-w dopants generates additional ingap states. Eventually, the negative charge may suppress the magnetic moment on the V-w dopants.