Journal
OPTICS LETTERS
Volume 45, Issue 15, Pages 4332-4335Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.394629
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Funding
- Narodowe Centrum Nauki (OPUS) [2015/17/B/ST7/04091]
- Fundacja na rzecz Nauki Polskiej (TEAM TECH) [2017-4/24, POIR.04.04.00-00-210C/16-00]
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We have fabricated tunnel-junction InGaN micro-LEDs using plasma-assisted molecular beam epitaxy technology, with top-down processing on GaN substrates. Devices have diameters between 5 mu m and 100 mu m. All of the devices emit light at 450 nm at a driving current density of about 10A cm(-2). We demonstrate that within micro-LEDs ranging in size from 100 mu m down to 5 mu m. the properties of these devices, both electrical and optical, are fully scalable. That means we can reproduce all electro-optical characteristics using a single set of parameters. Most notably, we do not observe any enhancement of non-radiative recombination for the smallest devices. We assign this result to a modification of the fabrication process, i.e., replacement of deep dry etching by a tunnel junction for the current confinement. These devices show excellent thermal stability of their light emission characteristics, enabling operation at current densities up to 1 kA cm(-2). (C) 2020 Optical Society of America
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