Related references
Note: Only part of the references are listed.Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications
Li Huang et al.
ACS NANO (2019)
2D material printer: a deterministic cross contamination-free transfer method for atomically layered materials
Rohit A. Hemnani et al.
2D MATERIALS (2019)
Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1-&ITx&ITW&ITx&ITTe2
Ozgur Burak Aslan et al.
NANO LETTERS (2018)
Fast MoTe2 Waveguide Photodetector with High Sensitivity at Telecommunication Wavelengths
P. Ma et al.
ACS PHOTONICS (2018)
Strain engineering in two-dimensional nanomaterials beyond graphene
Shikai Deng et al.
NANO TODAY (2018)
MorphoNoC: Exploring the design space of a configurable hybrid NoC using nanophotonics
Vikram K. Narayana et al.
MICROPROCESSORS AND MICROSYSTEMS (2017)
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits
Ya-Qing Bie et al.
NATURE NANOTECHNOLOGY (2017)
Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors
Maurizio Casalino et al.
ACS NANO (2017)
Integration of 2D materials on a silicon photonics platform for optoelectronics applications
Nathan Youngblood et al.
NANOPHOTONICS (2017)
Two dimensional WS2 lateral heterojunctions by strain modulation
Lan Meng et al.
APPLIED PHYSICS LETTERS (2016)
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector
Simone Schuler et al.
NANO LETTERS (2016)
Fast High-Responsivity Few-Layer MoTe2 Photodetectors
Tobias J. Octon et al.
ADVANCED OPTICAL MATERIALS (2016)
Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
Sajedeh Manzeli et al.
NANO LETTERS (2015)
High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
Ren-Jye Shiue et al.
NANO LETTERS (2015)
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
Nathan Youngblood et al.
NATURE PHOTONICS (2015)
Bandgap opening in few-layered monoclinic MoTe2
Dong Hoon Keum et al.
NATURE PHYSICS (2015)
State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength
Png Ching Eng et al.
NANOPHOTONICS (2015)
Environmental instability of few-layer black phosphorus
Joshua O. Island et al.
2D MATERIALS (2015)
Interface engineering for high performance graphene electronic devices
Dae Yool Jung et al.
NANO CONVERGENCE (2015)
Strain-Induced Indirect to Direct Bandgap Transition in Multi layer WSe2
Sujay B. Desai et al.
NANO LETTERS (2014)
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
Hiram J. Conley et al.
NANO LETTERS (2013)
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
Keliang He et al.
NANO LETTERS (2013)
Local Strain Engineering in Atomically Thin MoS2
Andres Castellanos-Gomez et al.
NANO LETTERS (2013)
Photon funnel makes the most of sun's rays
[Anonymous]
PHOTONICS SPECTRA (2013)
Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
M. Ghorbani-Asl et al.
PHYSICAL REVIEW B (2013)
Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains
Priya Johari et al.
ACS NANO (2012)
Mechanical and electronic properties of monolayer MoS2 under elastic strain
Qu Yue et al.
PHYSICS LETTERS A (2012)
Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band
Ilya Goykhman et al.
OPTICS EXPRESS (2012)
Strain-engineered artificial atom as a broad-spectrum solar energy funnel
Ji Feng et al.
NATURE PHOTONICS (2012)
Ge-Photodetectors for Si-Based Optoelectronic Integration
Jian Wang et al.
SENSORS (2011)
Strain-enhanced photoluminescence from Ge direct transition
T. -H. Cheng et al.
APPLIED PHYSICS LETTERS (2010)
Kelvin probe force microscopy and its application
Wilhelm Melitz et al.
SURFACE SCIENCE REPORTS (2010)
Strained silicon as a new electro-optic material
RS Jacobsen et al.
NATURE (2006)
Screened hybrid density functionals applied to solids -: art. no. 154709
J Paier et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
ML Lee et al.
JOURNAL OF APPLIED PHYSICS (2005)
Share Paper
