2D/2D heterojunction of g-C3N4/SnS2: room-temperature sensing material for ultrasensitive and rapid-recoverable NO2detection

Heterojunction engineering plays an indispensable role in improving gas-sensing performance. However, rational heterojunction engineering to achieve room-temperature NO(2)sensing with both high response and rapid recovery is still a challenge. Herein, a 2D/2D heterojunction of g-C3N4/SnS(2)is designed to improve the sensing performance of SnS(2)and used for ultrasensitive and rapid-recoverable NO(2)detection at room temperature. The pristine SnS(2)fails to work at room temperature because of its high resistivity and weak adsorption to NO2. After combination with g-C(3)N(4)nanosheets, the g-C3N4/SnS2-based sensor exhibits an extremely high response (503%) and short recovery time (166 s) towards 1 ppm NO(2)at room temperature. The improved sensing performance is primarily attributed to the increased adsorption sites and enhanced charge transfer induced by the 2D/2D heterojunctions with large interface contact area. This achievement of g-C3N4/SnS(2)2D/2D heterostructures demonstrates a promising pathway for the design of sensitive gas-sensing material based on a 2D/2D heterojunction strategy.