Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.

Automated summary

This research utilizes strain to modify the optical properties of semiconducting transition metal dichalcogenides, with a focus on MoS2, MoSe2, WS2, and WSe2. The study provides detailed technical descriptions for performing uniaxial strain measurements and proposes a calibration method for accurately determining the applied strain. Reflectance spectroscopy is then employed to analyze the strain tunability of electronic properties in single-, bi-, and tri-layer MoS2, MoSe2, WS2, and WSe2, with an assessment of flake-to-flake variability in 15 single-layer MoS2 flakes.