4.8 Article

Control of Spin-Orbit Torques by Interface Engineering in Topological Insulator Heterostructures

Journal

NANO LETTERS
Volume 20, Issue 8, Pages 5893-5899

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01850

Keywords

Topological insulator; spin-orbit torque; spin-torque ferromagnetic resonance; spin memory loss

Funding

  1. European Research Council [306652, 899896]
  2. Spanish Ministry of Economy and Competitiveness, MINECO [MAT2016-75952-R, SEV-2017-0706]
  3. CERCA Programme
  4. Secretariat for Universities and Research, Knowledge Department of the Generalitat de Catalunya [2017 SGR 827]
  5. EU-H2020 research and innovation program [654360]
  6. European Union's Marie Sklodowska-Curie actions [624897, 796925]
  7. MINECO Ramon y Cajal program [RYC2015-18523]
  8. Marie Curie Actions (MSCA) [796925] Funding Source: Marie Curie Actions (MSCA)
  9. European Research Council (ERC) [306652, 899896] Funding Source: European Research Council (ERC)

Ask authors/readers for more resources

(Bi1-xSbx)(2)Te-3 topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss. These phenomena can play a relevant role at other interfaces, such as those comprising transition metal dichalcogenides.

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