Journal
NANO LETTERS
Volume 20, Issue 9, Pages 6372-6380Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01955
Keywords
Transition-metal dichalcogenide; Damping-like torque; Spin-torque ferromagnetic resonance; Planar Hall effect
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Funding
- Swedish Research Council (VR) [2017-03799]
- Swedish Research Council [2017-03799] Funding Source: Swedish Research Council
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A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 +/- 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9 x 10(s) h/2e Omega(-1) m(-1) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spinorbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.
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