4.4 Article

Synthesis, characterization and electrochemical investigation of physical vapor deposited barium sulphide doped iron sulphide dithiocarbamate thin films

Journal

MICROELECTRONIC ENGINEERING
Volume 233, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.mee.2020.111400

Keywords

Metal chalcogenides; Bandgap; Microstructure; RBS; PVD; LSV

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Current work has undertaken the synthesis of barium sulphide, ferrous sulphide and barium sulphide doped ferrous sulphide complex using dithiocarbamate (DTC) ligand as single source precursor for the first time in an in-situ mode. Doped metal sulphides were grown into thin films of 840 nm thickness via physical vapor deposition (PVD) on pre-sonicated fluorine doped tin oxide (FTO) inside resistive heating unit (RHU). Prepared metal sulphides and thin films were evaluated for their crystallographic, compositional, optical, microstructural and elemental analysis via X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet visible spectrophotometry (UV-Vis), field emission scanning electron microscopy (FE-SEM), and Rutherford back scattering spectrometry (RBS), respectively. An average crystallite size of 37 nm was exhibited by XRD. FT-IR peaks recorded in the range of 4000-400 cm(-1) via potassium bromide palletization technique were indicative of the successful chelation of metal sulphides by DTC. UV-Vis based optical parameters expressed a direct and indirect bandgap of 3.5 and 3 eV, respectively. Exceedingly compact and uniform thin films were exhibited by FE-SEM with development of agglomerated clusters. Strong signals for barium, iron and sulphur were confirmed via RBS having 5 MV pelletron tandom accelerator with an alpha beam of 2.08 MeV made normally incident on the target sample and scattered at an angle of 170 degrees. Electrochemical investigation i.e. cyclic voltammetry (CV), linear sweep voltammetry (LSV) and chronoamperometry (CA) of the fabricated thin films expressed impressive electrical characteristics with a specific capacitance of 34.06 Fg(-1) at 10 mV/s and a functional stability for 1900 s at 100 mA. Fabricated films possess a suitable candidacy for utilization in photovoltaic and electrochemical contraptions.

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