Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 115, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105113
Keywords
Quantum dot; Black silicon; Broadband reflection reduction; Photon down-conversion
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Funding
- Universiti Sains Malaysia (USM), Malaysia [304/PFIZIK/6315133]
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The incorporation of silicon quantum dots (Si QDs) onto black silicon (b-Si) as a hybrid nanostructure has resulted in reflectance reduction over a wide spectral range (300-1000 nm). Si QDs were derived from porous Si (P-Si) by anodic electrochemical etching and ultrasonication whereas b-Si was fabricated by the two-step metal assisted chemical etching (MACE) technique. Si QDs with average diameter of 1.8 +/- 1.1 nm are suitable for photon down-conversion of UV light (365 nm) into the visible (665 and 740 nm). As a hybrid nanostructure, smaller sized Si QDs exhibited better surface coverage on the b-Si nanopillar sidewalls resulting in enhanced broadband reflection reduction, particularly at 600 nm and beyond. At wavelength of 600 nm, the Si QD/b-Si nanostructure exhibited a reflectance reduction from 9.9% to 6.5% with a more pronounced reduction towards the longer wavelengths, attributed to refractive index matching and optical confinement within the Si nanostructure. Photocurrent enhancement in the UV-blue excitation region is attributed to photon downconversion (UV to visible) by Si QDs to the underlying b-Si.
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