Reduction in efficiency droop/decline of green GaN-based light-emitting diodes by employing heterostructure cap layer

In this study, we theoretically studied the enhancement of carrier injection by employing heterostructure layers before p-GaN in green light-emitting diodes. It is evident from the simulation results that improved carrier injection results in high internal quantum efficiency and light output power in the structures using hetero-structures on the p-side. In comparison to conventional structure, reduced efficiency droop is observed suggesting promising high-performance green light-emitting diodes.