Laser beam micro engraving on silicon carbide

The research presented here deals with laser micro engraving of silicon carbide material. For conducting the experiments considered laser parameters were current, pulse frequency and scan speed. The design of experiment was performed with the help of Taguchi orthogonal array. The significance of laser micro engraving variables on the MRR and mark width was studied. The result indiactes that the laser parameter has a significant influence on MRR and mark width. Current was determined to be the prominent factor followed by pulse frequency and scan speed in both senario. The obtained results depict that the laser beam can be efficiently utilized for engraving process in silicon carbide. Further, various decision-making techniques such as WASPAS, MOORA, EDAS and TOPSIS were compared and optimal engraving condition was achieved. A mid-level current along with high pulse frequency and low scanning speed will be ideal to simultaneously obtain good material removal and mark width.