Related references
Note: Only part of the references are listed.Space charge control of point defect spin states in AlN
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I. Gamov et al.
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M. Lamprecht et al.
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Native Point Defects in GaN: A Hybrid-Functional Study
I. C. Diallo et al.
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Self-compensation due to point defects in Mg-doped GaN
Giacomo Miceli et al.
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Defects in AlN as candidates for solid-state qubits
J. B. Varley et al.
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Time-resolved photoluminescence characterization of 2 eV band in AlN
Ivan A. Aleksandrov et al.
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Origins of optical absorption and emission lines in AlN
Qimin Yan et al.
APPLIED PHYSICS LETTERS (2014)
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
Benjamin E. Gaddy et al.
APPLIED PHYSICS LETTERS (2014)
Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films
Zachary Bryan et al.
JOURNAL OF APPLIED PHYSICS (2014)
First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres
Audrius Alkauskas et al.
NEW JOURNAL OF PHYSICS (2014)
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
J. L. Lyons et al.
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Hybrid functional calculations of DX centers in AlN and GaN
L. Gordon et al.
PHYSICAL REVIEW B (2014)
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
B. Neuschl et al.
APPLIED PHYSICS LETTERS (2013)
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Y. Tu et al.
APPLIED PHYSICS LETTERS (2013)
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Benjamin E. Gaddy et al.
APPLIED PHYSICS LETTERS (2013)
Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2013)
Anisotropic absorption and emission of bulk (1(1)over-bar00) AlN
Martin Feneberg et al.
PHYSICAL REVIEW B (2013)
Optimized norm-conserving Vanderbilt pseudopotentials
D. R. Hamann
PHYSICAL REVIEW B (2013)
Convergence of density and hybrid functional defect calculations for compound semiconductors
Haowei Peng et al.
PHYSICAL REVIEW B (2013)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramon Collazo et al.
APPLIED PHYSICS LETTERS (2012)
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
Audrius Alkauskas et al.
PHYSICAL REVIEW LETTERS (2012)
Hybrid functional study of Si and O donors in wurtzite AlN
Leonardo Silvestri et al.
APPLIED PHYSICS LETTERS (2011)
Identification of the deep-level defects in AlN single crystals: EPR and TL studies
V. A. Soltamov et al.
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Electrostatic interactions between charged defects in supercells
Christoph Freysoldt et al.
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Ultraviolet luminescence in AlN
T. Schulz et al.
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Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Georg Rossbach et al.
PHYSICAL REVIEW B (2011)
Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state
Stephan Lany et al.
APPLIED PHYSICS LETTERS (2010)
High-excitation and high-resolution photoluminescence spectra of bulk AlN
Martin Feneberg et al.
PHYSICAL REVIEW B (2010)
Quantum computing with defects
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Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
Christoph Freysoldt et al.
PHYSICAL REVIEW LETTERS (2009)
Quantum register based on individual electronic and nuclear spin qubits in diamond
M. V. Gurudev Dutt et al.
SCIENCE (2007)
Hybrid functionals based on a screened Coulomb potential (vol 118, pg 8207, 2003)
Jochen Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
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Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN
MR Ranade et al.
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DX-behavior of Si in AlN
R Zeisel et al.
PHYSICAL REVIEW B (2000)