Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 31, Issue 18, Pages 15258-15266Publisher
SPRINGER
DOI: 10.1007/s10854-020-04090-3
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Funding
- National Natural Science Foundation of China [51472197, 51602242]
- Shaanxi Key Laboratory Fundament Research Foundation [18JS049]
- Fundamental Research Foundation of XATU of China [XAGDXJJ17009]
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BaBi4Ti4-x(Cu0.5W0.5)(x)O-15 ceramics with Cu2+ and W6+ co-substitution for the B-site Ti4+ were prepared by using the solid-state reaction process. It was desirable that piezoelectric properties of the BaBi4Ti4-x(Cu0.5W0.5)(x)O-15 ceramics could be improved by inducing the larger lattice distortion with the oxygen vacancy defects neutralized and restrained. Results of the X-ray diffraction analysis confirmed that crystal cell parametercdecreased obviously with the increase in the crystal cell parametera. Curie temperature, resistivity, and piezoelectric properties of the BBT ceramics are improved by the copper and tungsten modification. The maximum value of piezoelectric coefficient (similar to 30 pC/N) can be obtained in the BaBi4Ti4-x(Cu0.5W0.5)(x)O-15 ceramics.
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