Journal
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 503, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jmmm.2020.166618
Keywords
Sm3+ doped In2S3 nanoparticles; Room temperature ferromagnetism; First principles calculations; Spin-polarized
Funding
- Major Research Plan of the National Natural Science Foundation of China [91963101]
- High Performance Computing Center of Jilin University, China
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Diluted magnetic semiconductors with room-temperature ferromagnetism (RTFM) opens new prospects for the development of next-generation spintronic devices. For now, the rare earth doping is an effective method to tune the ferromagnetism of semiconductor materials. In this work, we fabricated undoped In2S3 and In2S3: Sm3+ nanoparticles using gas-liquid phase chemical deposition method. UV-visible and photoluminescence spectra demonstrate that the introduction of Sm3+ ions lead to bandgap narrowing and enhanced luminescence intensity. Magnetic characterizations show that all synthetic samples display a ferromagnetic behaviour, and the maximum saturation magnetization of the samples can be tuned by regulating the concentration of doped Sm3+ ions. The RTFM in Sm doped In2S3 nanoparticles derives from the coupling interaction between the localized defect states and Sm3+ ions and is described using bound magnetic polarons (BMPs) mechanism. First-principle calculations reveal that In vacancies and Sm dopants are responsible for the generation of magnetic moments which come mainly from S 3p orbitals around the In vacancy and Sm 4f orbitals. Our results suggest that In2S3: Sm3+ nanoparticles constitute promising semiconductor materials for use in future electronic and spintronic devices.
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