4.6 Article

Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays

Journal

JOURNAL OF LUMINESCENCE
Volume 222, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.jlumin.2020.117123

Keywords

Quantum-disk-in-nanowire arrays; Rapid thermal annealing; Internal quantum efficiency; Non-radiative recombination rate; Compositional inhomogeneity

Categories

Funding

  1. National Science Foundation (MRSEC program) [DMR-1120923]

Ask authors/readers for more resources

The effects of rapid thermal annealing on the structural and optical properties of InGaN/GaN quantum disk-innanowire heterostructure arrays have been investigated. Temperature-dependent and time-resolved photoluminescence measurements were complemented by x-ray photoemission spectroscopy. It was observed that annealing, in general, increased the non-radiative recombination rate in the InGaN quantum disk regions and consequently lowered the internal quantum efficiency and reduced the average carrier lifetime. These are due to an increase in the density of surface states associated with -O and -OH bonds in the disk region and possible enhancement of non-radiative recombination due to In segregation.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available