Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 833, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.155064
Keywords
Synaptic device; Memristor; Hybrid organic-inorganic perovskite; Neuromorphic computing; Plasticity
Categories
Funding
- Nano Material Technology Development Programs through the National Research Foundation of Korea (NRF) - Ministry of science, ICT & Future Planning [NRF-2016M3A7B4910426]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2016R1A6A1A03013422]
- Global Frontier R&D Program on Center for Multiscale Energy System Research [2012M3A6A7054856]
- National Research Foundation under the Ministry of Science, ICT & Future Planning, Republic of Korea [2018R1A2B2006708]
- National Research Foundation of Korea [5199991414321, 2016R1A6A1A03013422] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Organiceinorganic hybrid perovskite (CH3NH3)PbX3 [X = I-, Cl-, and Br-] materials were evaluated with memristors for resistive switching (RS) and synaptic functionalities. Analog or multilevel memory behaviors, as well as digital RS characteristics of the Ag/ MAPbI(3)/FTO device structure, were observed in the case of CH3NH3PbI3, whereas (CH3NH3)PbCl3 and (CH3NH3)PbBr3 showed no switching characteristics. The conduction mechanism of RS was dominated by ohmic conduction, space-charge-limited conduction (SCLC), and trap-filled SCLC in both the low-resistance state and the high-resistance state. It is considered that the formation of the b-AgI phase at the interface between Ag and MAPbI(3) thin films resulted in different RS and synaptic function behaviors. We successfully emulated the fundamental synaptic characteristics with only a Ag/MAPbI(3)/FTO memristor, such as the spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and spike-timing dependent plasticity. The energy consumption of the MAPbI(3)-based memristor was estimated to be as low as 47 fJ/mm(2). Our results indicate that organiceinorganic hybrid perovskite (CH3NH3)PbI3 can be adopted in brain-inspired synaptic devices for hardware-based neuromorphic system applications. (c) 2020 Elsevier B.V. All rights reserved.
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