Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 59, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1347-4065/ab9c75
Keywords
Heusler alloys; Half-metals; films; ab-intio calculations; magnetic tunnel junctions
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Funding
- JST CREST [JPMJCR17J5]
- EPSRC [EP/M02458X/1] Funding Source: UKRI
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Nowadays advanced magnetic tunnel junction applications demand very high tunnel magnetoresistance at room temperature, thus it is quite important to explore high Curie temperatureT(c)half-metallic Heusler alloys. In this article first-principles calculation unveiled that NiCrMnSi has aT(c)of 1200 K comparable to that of traditional Co2MnSi Heusler alloys, even though it does not contain a Co element. In addition, we examined whether NiCrMnSi Heusler phase films can be obtained by magnetron sputtering on MgO substrates. The results of the structural analysis and first-principles calculations indicated that the NiCrMnSi Heusler phase is metastable. A possible route to obtain a metastable NiCrMnSi Heusler alloy is to utilize appropriate templates.
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