Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 35, Issue 6, Pages 6625-6635Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2019.2954698
Keywords
Dynamic voltage balancing; gate drive circuit; series connected; silicon carbide (SiC) metal-oxide-semiconductor; field-effect transistors (MOSFETs)
Categories
Funding
- State Key Laboratory of Advanced Power Transmission Technology [SGGR0000WLQT1800789]
- National Key Research and Development Program of China [2018YFB0905801]
- Shaanxi Key Research and Development Plan [2018GY-043]
Ask authors/readers for more resources
Compared with silicon insulated-gate bipolar transistor, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) presents good features that it clearly shows on its switching and thermal performance. However, the fast switching speed of SiC MOSFET makes it much more difficult for solving the dynamic voltage imbalance problem caused by the parameter fluctuations of the SiC MOSFETs and drive circuits when they are connected in series. This article proposes an effective gate drive circuit and its dynamic voltage balancing control method to tackle this issue. The proposed method not only balances the dynamic voltage during high-speed switching but also adapts to the variation of the dc-bus voltage by utilization of overdrive control method (ODCM). Furthermore, to widen the control range of the ODCM, a switched-capacitor compensation method by switching and combining different drive capacitors into different values is proposed. The operation principles and the parameter design-method are discussed in detail. The performance of the proposed series-connected SiC MOSFETs gate drive circuit and its dynamic voltage balancing control method is validated by experimental results. The dynamic voltage can be well balanced within the design range.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available