Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 67, Issue 7, Pages 1390-1394Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2958292
Keywords
Radiation effects; Electric fields; Semiconductor process modeling; Degradation; Doping profiles; Semiconductor device measurement; BVDS; ionizing radiation; linear variable doping (LVD); power devices; radiation effects; silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs); technology computer aided design (TCAD) simulations; total ionizing dose (TID); uniform doping (UD)
Funding
- National Natural Science Foundation of China [11690045, 61674015, 61771167, 61704039]
Ask authors/readers for more resources
The breakdown voltage (BVDS) of uniform doping (UD) and linear variable doping (LVD) silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs) is examined after exposure to the total ionizing dose (TID). The results show BVDS degradation with accumulated dose. TID degradation with the MOS device biased off is more severe than that with the MOS device biased on. Also, LVD BVDS is more significant than UD BVDS at a given TID. Technology computer-aided design (TCAD) simulation is used to gain an insight into the mechanism causing BVDS degradation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
