Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 6, Pages 2516-2521Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2989247
Keywords
Defects generation; fix charge; GeO2; germanium; slow trap
Funding
- Zhejiang Provincial Natural Science Foundation of China [LR18F040001]
- Fundamental Research Funds for the Central Universities
Ask authors/readers for more resources
The impact of electrical stress on the defect generation behaviors in thin GeO2/n-Ge gate stacks has been investigated through the measurement of the time-dependent dielectric breakdown (TDDB) and the stress-induced leakage current (SILC) characteristics. A multiple-spot breakdown (BD) event is confirmed, as well as a larger SILC generation probability compared with that in SiO2/Si structures. It is found that the slow trap generation is dominant by the amount of injected electron fluence (Q(inj)), and the fix charge generation is attributed to both Qinj and GeO2 thickness.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
