Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 67, Issue 7, Pages 1304-1308Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2019.2932471
Keywords
Charge pumps; Threshold voltage; Topology; MOSFET; Resistance; Logic gates; DC-DC converter; Dickson charge pump; energy harvesting; low-voltage; switched capacitors converters (SCC)
Categories
Funding
- Project Control, Measurement and Integrated Systems: New Methods and Applications-piano per la ricerca 2016-2018 DIEEI, linea intervento 2
- University of Catania
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This brief presents a novel charge pump suitable to work under very-low-voltage supply. The circuit exploits a novel charge transfer switch made up by the combination of a NMOS and a PMOS transistor whose gates are connected to internal nodes of the charge pump to enhance overdrive voltage. This solution allows working with supply voltage values lower that the MOS threshold voltage. Post layout simulation results using a 65-nm CMOS standard technology show the effectiveness of the proposed solution and its advantage as compared to a traditional latched charge pump in terms of high current driving range, power efficiency and speed.
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